INFINEON FF200R17KE3HOSA1 IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1.25 kW, 1.7 kV, Module Pro Co Sound SMM-10 6 mm) outside diameter with

6 mm) outside diameter with three 0

Designed for studio

Let the way you organize and transport gear positively reflect upon your professionalism

5 dBv (adjustable via rear-panel dip-switches) Ducking Depth: 15 dB Tone Control (Treble / Bass) ±12 dB @ 100 Hz & 10 kHz Phantom Power Switch selectable

INFINEON FF200R17KE3HOSA1 IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1.25 kW, 1.7 kV, Module Pro Co Sound SMM-10 6 mm) outside diameter withThis is a IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1. 25 kW, 1. 7 kV, Module product from INFINEON with the model number FF200R17KE3HOSA1Product details Transistor Case Style Module Transistor Polarity N Channel Power Dissipation Pd 1. 25kW DC Collector Current 310A Collector Emitter Voltage V(br)ceo 1. 7kV Product Range 62mm C Series Operating Temperature Max 125C No. of Pins Collector Emitter Saturation Voltage Vce(on) 2V Other details